Design and Characterisation of VO 2 Based Switches for Ultra-Fast Reconfigurable Devices - Université de Bretagne Occidentale Access content directly
Conference Papers Year : 2019

Design and Characterisation of VO 2 Based Switches for Ultra-Fast Reconfigurable Devices

Mohammad Nikhian Sadiq
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Marc Le Roy
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André Pérennec
Paul Laurent
Noham Martin
Damien Passerieux
Rémi Boyer
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Gérard Tanné

Abstract

Mott transition materials seem particularly promising to design reconfigurable devices. In this paper, Vanadium Dioxide (VO2) is studied and characterized to design switches and elementary RF devices. The study shows experimentally promising RF performances under electrical control and also for an optical excitation of the VO2 with ultra-short switching time. These results put forward the use of VO2 switches as a core function to design ultra-fast purpose RF devices dedicated to future military and civilian standards.
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Dates and versions

hal-02135908 , version 1 (21-05-2019)

Identifiers

  • HAL Id : hal-02135908 , version 1

Cite

Mohammad Nikhian Sadiq, Marc Le Roy, André Pérennec, Paul Laurent, Noham Martin, et al.. Design and Characterisation of VO 2 Based Switches for Ultra-Fast Reconfigurable Devices. International Microwave Workshop Series on Advanced Materials and Processes (IMWS-AMP 2019), Jul 2019, Bochum, Germany. ⟨hal-02135908⟩
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