Design and Characterisation of VO 2 Based Switches for Ultra-Fast Reconfigurable Devices

Mohammad Sadiq; Marc Le Roy; André Pérennec; Paul Laurent; Noham Martin; Damien Passerieux; Aurelian Crunteanu; Rémi Boyer; Frédéric Dumas-Bouchiat; Marie-Blandine Martin; Laurent Divay; Quentin Levesque; Gérard Tanné

Design and Characterisation of VO 2 Based Switches for Ultra-Fast Reconfigurable Devices

Mohammad Sadiq ¹ Marc Le Roy ^{1, *} André Pérennec ¹ Paul Laurent ¹ Noham Martin ¹ Damien Passerieux ² Aurelian Crunteanu ³ Rémi Boyer ⁴ Frédéric Dumas-Bouchiat ⁴ Marie-Blandine Martin ⁵ Laurent Divay ⁵ Quentin Levesque ⁵ Gérard Tanné ¹

* Corresponding author

1 Lab-STICC_UBO_MOM_DIM

Lab-STICC - Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance, UBO - Université de Brest

2 XLIM - XLIM

3 XLIM-RFEI - RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie

XLIM - XLIM : RFEI

4 IRCER - Institut de Recherche sur les CERamiques

5 Thales Research and Technology [Palaiseau]

Abstract : Mott transition materials seem particularly promising to design reconfigurable devices. In this paper, Vanadium Dioxide (VO2) is studied and characterized to design switches and elementary RF devices. The study shows experimentally promising RF performances under electrical control and also for an optical excitation of the VO2 with ultra-short switching time. These results put forward the use of VO2 switches as a core function to design ultra-fast purpose RF devices dedicated to future military and civilian standards.

Keywords : ultra-fast switches Vanadium dioxide VO2 thin films

Document type :

Conference papers

Domain :

Engineering Sciences [physics] / Electronics

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https://hal.univ-brest.fr/hal-02135908
Contributor : Marc Le Roy <>
Submitted on : Tuesday, May 21, 2019 - 4:07:50 PM
Last modification on : Tuesday, July 9, 2019 - 1:13:59 AM

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