KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications

In this study about the relationships between structural and microwave electrical properties of KTa1-xNbxO3 (KTN) ferroelectric materials, a KTN thin film was deposited on different substrates to investigate how KTN growth affects the microwave behavior. Interdigital capacitors and stubs were made on these films through a simple engraving process. Microwave measurements under a static electric field showed the importance of the substrate on the circuit behavior and, notably, on the tuning factor.

Keywords

ferroelectrics thin films microwave circuits tunable devices

Domains

Electromagnetism Electronics Materials Micro and nanotechnologies/Microelectronics Inorganic chemistry Material chemistry

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IEEEUFFC_Laur_vol53no12_dec2006.pdf (1.15 Mo)

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Vincent Laur : Connect in order to contact the contributor

https://hal.univ-brest.fr/hal-00459192

Submitted on : Tuesday, February 23, 2010-4:46:28 PM

Last modification on : Friday, July 5, 2024-12:36:09 PM

Long-term archiving on : Friday, June 18, 2010-6:27:12 PM

Dates and versions

hal-00459192 , version 1 (23-02-2010)

Identifiers

HAL Id : hal-00459192 , version 1
DOI : 10.1109/TUFFC.2006.174

Cite

Vincent Laur, Anthony Rousseau, Gérard Tanné, Paul Laurent, Stéphanie Députier, et al.. KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2006, 53 (12), pp.2280-2286. ⟨10.1109/TUFFC.2006.174⟩. ⟨hal-00459192⟩

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