KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications

In this study about the relationships between structural and microwave electrical properties of KTa1-xNbxO3 (KTN) ferroelectric materials, a KTN thin film was deposited on different substrates to investigate how KTN growth affects the microwave behavior. Interdigital capacitors and stubs were made on these films through a simple engraving process. Microwave measurements under a static electric field showed the importance of the substrate on the circuit behavior and, notably, on the tuning factor.

Mots clés

ferroelectrics thin films microwave circuits tunable devices

Domaines

Electromagnétisme Electronique Matériaux Micro et nanotechnologies/Microélectronique Chimie inorganique Matériaux

Fichier principal

IEEEUFFC_Laur_vol53no12_dec2006.pdf (1.15 Mo)

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https://hal.univ-brest.fr/hal-00459192

Soumis le : mardi 23 février 2010-16:46:28

Dernière modification le : vendredi 5 juillet 2024-12:36:09

Archivage à long terme le : vendredi 18 juin 2010-18:27:12

Dates et versions

hal-00459192 , version 1 (23-02-2010)

Identifiants

HAL Id : hal-00459192 , version 1
DOI : 10.1109/TUFFC.2006.174

Citer

Vincent Laur, Anthony Rousseau, Gérard Tanné, Paul Laurent, Stéphanie Députier, et al.. KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2006, 53 (12), pp.2280-2286. ⟨10.1109/TUFFC.2006.174⟩. ⟨hal-00459192⟩

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