KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications

Vincent Laur 1 Anthony Rousseau 2 Gérard Tanné 1 Paul Laurent 1 Stéphanie Députier 2 Maryline Guilloux-Viry 2 Fabrice Huret 1
1 LEST - Laboratoire d'Electronique et Systèmes de Télécommunications
2 LCSIM - Laboratoire de Chimie du solide et inorganique moléculaire
Abstract : In this study about the relationships between structural and microwave electrical properties of KTa1-xNbxO3 (KTN) ferroelectric materials, a KTN thin film was deposited on different substrates to investigate how KTN growth affects the microwave behavior. Interdigital capacitors and stubs were made on these films through a simple engraving process. Microwave measurements under a static electric field showed the importance of the substrate on the circuit behavior and, notably, on the tuning factor.
Keywords : ferroelectrics thin films microwave circuits tunable devices
Type de document :
Article dans une revue
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Institute of Electrical and Electronics Engineers, 2006, 53 (12), pp.2280-2286. 〈10.1109/TUFFC.2006.174〉
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Contributeur : Vincent Laur <>
Soumis le : mardi 23 février 2010 - 16:46:28
Dernière modification le : mercredi 16 mai 2018 - 11:22:53
Document(s) archivé(s) le : vendredi 18 juin 2010 - 18:27:12

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Vincent Laur, Anthony Rousseau, Gérard Tanné, Paul Laurent, Stéphanie Députier, et al.. KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Institute of Electrical and Electronics Engineers, 2006, 53 (12), pp.2280-2286. 〈10.1109/TUFFC.2006.174〉. 〈hal-00459192〉

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