KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications - Université de Bretagne Occidentale Access content directly
Journal Articles IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control Year : 2006

KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications

Abstract

In this study about the relationships between structural and microwave electrical properties of KTa1-xNbxO3 (KTN) ferroelectric materials, a KTN thin film was deposited on different substrates to investigate how KTN growth affects the microwave behavior. Interdigital capacitors and stubs were made on these films through a simple engraving process. Microwave measurements under a static electric field showed the importance of the substrate on the circuit behavior and, notably, on the tuning factor.
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Dates and versions

hal-00459192 , version 1 (23-02-2010)

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Vincent Laur, Anthony Rousseau, Gérard Tanné, Paul Laurent, Stéphanie Députier, et al.. KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2006, 53 (12), pp.2280-2286. ⟨10.1109/TUFFC.2006.174⟩. ⟨hal-00459192⟩
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