Robust nonlinear models for CMOS buffers

Chérif El Valid Diouf 1, 2 Mihai Telescu 1, 2 Noël Tanguy 2, 1 Igor Simone Stievano 3 F.G. Canavero 3
1 Lab-STICC_UBO_MOM_PIM
Lab-STICC - Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance, UBO - Université de Brest
Abstract : For over a decade, buffer macromodeling has been a topic of great interest for the integrated circuit industry. The performance assessment of high-speed datalinks requires efficient means of simulating IC ports making compact and accurate behavioral models valuable instruments. In the present communication a new modeling technique, with several important advantages is described. The approach is purely “black-box”, relying exclusively on the observation of the external port voltages and currents safeguarding intellectual property. Unlike the standard algorithms currently used in EDA tools, the method described in this paper models the input-output behavior by means of a simple nonlinear system easy to identify and implement. Good model performance in overclocking conditions is an important advantage.
Type de document :
Communication dans un congrès
20th IEEE Workshop on Signal and Power Integrity (SPI), May 2016, Turin, Italy. 2016, 20th IEEE Workshop on Signal and Power Integrity (SPI). 〈10.1109/SaPIW.2016.7496284〉
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http://hal.univ-brest.fr/hal-01342082
Contributeur : Noël Tanguy <>
Soumis le : mardi 5 juillet 2016 - 13:46:36
Dernière modification le : mardi 16 janvier 2018 - 15:54:26

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Chérif El Valid Diouf, Mihai Telescu, Noël Tanguy, Igor Simone Stievano, F.G. Canavero. Robust nonlinear models for CMOS buffers. 20th IEEE Workshop on Signal and Power Integrity (SPI), May 2016, Turin, Italy. 2016, 20th IEEE Workshop on Signal and Power Integrity (SPI). 〈10.1109/SaPIW.2016.7496284〉. 〈hal-01342082〉

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