High-Frequency Effects of Orthogonal Interconnect Layers on Inductance in High-Speed VLSI Circuits

Abstract : This communication deals with frequency behavior of orthogonal interconnect layers on inductance in high-speed VLSI circuits. The RLC parameters of the distributed model are determined by electromagnetic simulations. We evidence the error made on inductance in the range 1-50 GHz for three traditional interconnect configurations. A time-domain analysis highlights the impact of the inductance error on digital signals propagation. This analysis uses a numerical tool to take into account the frequency dependence of RLC parameters
Type de document :
Communication dans un congrès
IEEE Workshop on Signal Propagation on Interconnects, 2006., May 2006, Berlin, Germany. pp.253-256, 2006, 〈10.1109/SPI.2006.289237〉
Liste complète des métadonnées

http://hal.univ-brest.fr/hal-00488108
Contributeur : Noël Tanguy <>
Soumis le : mardi 1 juin 2010 - 11:10:42
Dernière modification le : mardi 16 janvier 2018 - 15:54:15

Identifiants

Citation

Yves Quéré, Thierry Le Gouguec, Noël Tanguy, Pierre-Marie Martin, Denis Le Berre, et al.. High-Frequency Effects of Orthogonal Interconnect Layers on Inductance in High-Speed VLSI Circuits. IEEE Workshop on Signal Propagation on Interconnects, 2006., May 2006, Berlin, Germany. pp.253-256, 2006, 〈10.1109/SPI.2006.289237〉. 〈hal-00488108〉

Partager

Métriques

Consultations de la notice

455