High-Frequency Effects of Orthogonal Interconnect Layers on Inductance in High-Speed VLSI Circuits - Université de Bretagne Occidentale Access content directly
Conference Papers Year : 2006

High-Frequency Effects of Orthogonal Interconnect Layers on Inductance in High-Speed VLSI Circuits

Abstract

This communication deals with frequency behavior of orthogonal interconnect layers on inductance in high-speed VLSI circuits. The RLC parameters of the distributed model are determined by electromagnetic simulations. We evidence the error made on inductance in the range 1-50 GHz for three traditional interconnect configurations. A time-domain analysis highlights the impact of the inductance error on digital signals propagation. This analysis uses a numerical tool to take into account the frequency dependence of RLC parameters
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Dates and versions

hal-00488108 , version 1 (01-06-2010)

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Yves Quéré, Thierry Le Gouguec, Noël Tanguy, Pierre-Marie Martin, Denis Le Berre, et al.. High-Frequency Effects of Orthogonal Interconnect Layers on Inductance in High-Speed VLSI Circuits. IEEE Workshop on Signal Propagation on Interconnects, 2006., May 2006, Berlin, Germany. pp.253-256, ⟨10.1109/SPI.2006.289237⟩. ⟨hal-00488108⟩
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