KTN dielectric properties at microwave frequencies: substrate influence

Vincent Laur 1 Gérard Tanné 1 Paul Laurent 1 Fabrice Huret 1 Anthony Rousseau 2 Valérie Bouquet 2 Maryline Guilloux-Viry 2
1 Lab-STICC - Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (UMR 3192)
2 ISCR - Institut des Sciences Chimiques de Rennes
Abstract : To determine the dielectric properties of ferroelectric thin-films over a wide range of frequencies we developed a simple and efficient method based on the measurement of coplanar waveguide realized on ferroelectric/dielectric heterostructures by using a Spectral Domain Approach. We applied this method to KTa1−xNbxO3 (KTN) thinfilms deposited on different substrates. The strong differences observed in the dielectric behavior of KTNs according to the growth substrate suggest that it is affected not only via the resulting microstructure, but also by the induced strains. Accuracy of the method was estimated to 15 and 10% on permittivity and loss tangent, respectively.
Type de document :
Communication dans un congrès
European Conference on Applications of Polar Dielectrics, Sep 2006, Metz, France. 2006
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http://hal.univ-brest.fr/hal-00484658
Contributeur : Vincent Laur <>
Soumis le : mardi 18 mai 2010 - 17:40:26
Dernière modification le : vendredi 25 mai 2018 - 01:25:32

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  • HAL Id : hal-00484658, version 1

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Vincent Laur, Gérard Tanné, Paul Laurent, Fabrice Huret, Anthony Rousseau, et al.. KTN dielectric properties at microwave frequencies: substrate influence. European Conference on Applications of Polar Dielectrics, Sep 2006, Metz, France. 2006. 〈hal-00484658〉

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