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Thermal Simulation and Characterization of GaN HEMT using Gate Resistance Thermometry and Thermoreflectance imaging

Abstract : Two electrical methods and one optical method are used, in order to measure the temperature of the hot spot of a 150nm, 2x150µm GaN HEMT. One of the electrical methods is based on Gate Resistance Thermometry (GTR) [1] and the other one is based on the On State resistance Ron obtained from Id(Vgs,Vds) drain current characterization [2]. The optical one uses the reflectivity variation principle to measure the surface temperature and is based on CCD-thermoreflectance [3]. The measurement results are supported by nonlinear simulation, using Finite Element Method (FEM). The use of the GTR electrical method allows a characterization of the temperature along the gates close to the hot spot region and averages the temperature over the gate width. This method demonstrates a relative linearity in the variation of thermal resistance as function of the applied power dissipation and notably a higher thermal resistance value compared to the conventional way of RON extraction. We may notice that with the On State resistance, the average is realized over the Source-Drain length. The optical method based on the ThermoReflectance (TR) allows a measurement of the surface temperature of the component at the hot spot. The values obtained are consistent with those found by electrical methods and FEM simulation up to 10W/mm.
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Submitted on : Thursday, August 4, 2022 - 11:20:52 PM
Last modification on : Saturday, August 6, 2022 - 3:52:11 AM

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  • HAL Id : hal-03746163, version 1

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Khalil Karrame, Anass Jakani, Luc Kakou, Christophe Chang, Maggy Colas, et al.. Thermal Simulation and Characterization of GaN HEMT using Gate Resistance Thermometry and Thermoreflectance imaging. 2022 IEEE MTT-S International Conference on Electromagnetic and Multiphysics Modeling and Optimization (NEMO2022), Jul 2022, Limoges, France. ⟨hal-03746163⟩

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