KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications

Abstract : In this study about the relationships between structural and microwave electrical properties of KTa1-xNbxO3 (KTN) ferroelectric materials, a KTN thin film was deposited on different substrates to investigate how KTN growth affects the microwave behavior. Interdigital capacitors and stubs were made on these films through a simple engraving process. Microwave measurements under a static electric field showed the importance of the substrate on the circuit behavior and, notably, on the tuning factor.
Type de document :
Article dans une revue
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Institute of Electrical and Electronics Engineers, 2006, 53 (12), pp.2280-2286. 〈10.1109/TUFFC.2006.174〉
Liste complète des métadonnées

http://hal.univ-brest.fr/hal-00459192
Contributeur : Vincent Laur <>
Soumis le : mardi 23 février 2010 - 16:46:28
Dernière modification le : jeudi 11 janvier 2018 - 06:16:32
Document(s) archivé(s) le : vendredi 18 juin 2010 - 18:27:12

Fichier

IEEEUFFC_Laur_vol53no12_dec200...
Fichiers éditeurs autorisés sur une archive ouverte

Identifiants

Citation

Vincent Laur, Anthony Rousseau, Gérard Tanné, Paul Laurent, Stéphanie Députier, et al.. KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Institute of Electrical and Electronics Engineers, 2006, 53 (12), pp.2280-2286. 〈10.1109/TUFFC.2006.174〉. 〈hal-00459192〉

Partager

Métriques

Consultations de la notice

287

Téléchargements de fichiers

176